MSA-0835

Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0835, -0836 Features Usable Gain to 6.0␣ GHz High Gain: 32.5 dB Typical at 0.1␣ GHz 23.0 dB Typical at 1.0␣ GHz Low Noise Figure: 3.0␣ dB Typical at 1.0␣ GHz Cost Effective Ceramic Microstrip Package 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. 35 micro-X Package[1] Description The MSA-0835 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block above The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package␣ 36) as MSA-0836. Note: 1. Short leaded 36 package available upon request. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9596E 6-414 MSA-0835, -0836 Absolute Maximum Ratings Parameter Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature [4] Absolute Maximum[1] 80 mA 750 mW +13 dBm 200...