MSA-0910

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0910 Features Broadband, Minimum Ripple Cascadable 50 Ω Gain Block 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz 3 dB Bandwidth: 0.1 to 6.0 GHz Low VSWR: ≤ 1.5:1 from 0.1 to 4.0␣ GHz 11.5 dBm Typical P1dB at 1.0␣ GHz Hermetic Gold-ceramic Microstrip Package Description The MSA-0910 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for very wide bandwidth industrial and military applications that require flat gain and low VSWR. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 100 mil Package Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9551E 6-434 MSA-0910 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 145°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.9 mW/°C for TC > 91°C. 4. The small spot size o...