Cascadable Silicon Bipolar MMIC Amplifier
Agilent MSA-0370 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet
Features
• Cascadable 50 Ω Gain Block • 3 dB Band...
Description
Agilent MSA-0370 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet
Features
Cascadable 50 Ω Gain Block 3 dB Bandwidth: DC to 2.8 GHz
Description
The MSA-0370 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
70 mil Package
12.0 dB Typical Gain at 1.0 GHz 10.0 dBm Typical P1 dB at 1.0 GHz Unconditionally Stable (k>1) Hermetic Gold-ceramic Microstrip Package
Typical Biasing Configuration
R bias VCC > 7 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5 V
2
2
MSA-0370 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 125°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8 mW/°C for TC > 147°C. 4. The small spot size of this techni...
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