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MSA-0370

Hewlett-Packard

Cascadable Silicon Bipolar MMIC Amplifier

Agilent MSA-0370 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Band...


Hewlett-Packard

MSA-0370

File Download Download MSA-0370 Datasheet


Description
Agilent MSA-0370 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet Features Cascadable 50 Ω Gain Block 3 dB Bandwidth: DC to 2.8 GHz Description The MSA-0370 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package 12.0 dB Typical Gain at 1.0 GHz 10.0 dBm Typical P1 dB at 1.0 GHz Unconditionally Stable (k>1) Hermetic Gold-ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 2 MSA-0370 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 125°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8 mW/°C for TC > 147°C. 4. The small spot size of this techni...




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