MSA-0400

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0400 Features Cascadable 50 Ω Gain Block 3 dB Bandwidth: DC to 4.0 GHz 8.5 dB Typical Gain at 1.0␣ GHz 16.0␣ dBm Typical P 1 dB at 1.0␣ GHz The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire. See APPLICATIONS section, “Chip Use”. Chip Outline[1] Description The MSA-0400 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. Note: 1. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) C block IN MSA C block OUT Vd = 6.3 V 5965-9572E 6-318 MSA-0400 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 120 mA 850 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 35°C/...