55NF06

STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I²PAK/D²PAK STripFET™ II POWER MOSFET TYPE STP55NF06 STB55NF06-1 www.DataSheet4U.com STB55NF06 STP55NF06FP s s s s VDSS 60 V 60 V 60 V 60 V RDS(on) <0.018 <0.018 <0.018 <0.018 Ω Ω Ω Ω ID 50 A 50 A 50 A 50 A(*) TO-220FP 3 1 2 TO-220 1 3 2 s TYPICAL RDS(on) = 0.015 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) THROUGH-HOLE I²PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX “-1") 3 I²PAK TO-262 (Suffix “-1”) 3 12 1 D²PAK TO-263 (Suffix “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj to Rth value INTERNAL SCHEMATIC DIAGRAM Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recover...