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AS4C14400 Datasheet, Equivalent, or EDO.(AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO) (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO) |
| Part | AS4C14400 |
|---|---|
| Description | (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO) |
| Feature | High Performance 1M×4 CMOS DRAM
AS4C14 400 AS4C14405
®
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)
Preliminary i nformation Features
• Organization: 1 ,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/ 25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • 1 024 refresh cycles, 16 ms refresh inter val - RAS-only or CAS-before-RAS refres h • Low power consumption - Active: 385 mW max (-60) - Standby: 5. 5 mW max , CMOS I/O • Fast page mode (AS4C144 00) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 12 13 . |
| Manufacture | Alliance Semiconductor |
| Datasheet |
| Part | AS4C14400 |
|---|---|
| Description | (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO) |
| Feature | High Performance 1M×4 CMOS DRAM
AS4C14 400 AS4C14405
®
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)
Preliminary i nformation Features
• Organization: 1 ,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/ 25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • 1 024 refresh cycles, 16 ms refresh inter val - RAS-only or CAS-before-RAS refres h • Low power consumption - Active: 385 mW max (-60) - Standby: 5. 5 mW max , CMOS I/O • Fast page mode (AS4C144 00) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 12 13 . |
| Manufacture | Alliance Semiconductor |
| Datasheet |
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