(AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)
High Performance 1M×4 CMOS DRAM
AS4C14400 AS4C14405
®
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)
Preliminary inform...
Description
High Performance 1M×4 CMOS DRAM
AS4C14400 AS4C14405
®
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)
Preliminary information Features
Organization: 1,048,576 words × 4 bits High speed
- 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time
1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
Low power consumption
- Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O
Fast page mode (AS4C14400) or EDO (AS4C14405)
Pin arrangement
SOJ
I/O0 I/O1 WE RAS A9 1 2 3 4 5
A0 A1 A2 A3 VCC
9 10 11 12 13
Selection guide
Maximum RAS access time Maximum CAS access time
Maximum column address access time
m o .c U 4 t e e h S a t a .D w w w
- 300 mil, 20/26-pin SOJ - 300 mil, 20/26-pin TSOP
Read-modify-write TTL-compatible, three-state I/O JEDEC standard packages
Single 5V power supply ESD protection ≥ 2001V Latch-up current ≥ 200 mA
Pin designation
Pin(s) RAS OE A0 to A9
TSOP
Description
26 25 24 23 22
GND I/O3 I/O2 CAS OE
I/O0 I/O1 WE RAS A9
1 2 3 4 5
26 25 24 23 22
GND I/O3 I/O2 CAS OE
Address inputs Input/output
Row address strobe Output enable
I/O0 to I/O3 CAS WE VCC
18 17 16 15 14
A8 A7 A6 A5 A4
A0 A1 A2 A3 VCC
9 10 11 12 13
18 17 16 15 14
A8 A7 A6 A5 A4
Column address strobe Read/write control Power (5.0 ± 0.5V)
GND
Ground
Symbol tRAC tCAA tCAC
4C14400-40 40 20 10 10 70 30 90
4C14400-50 50 25 13 13 90 35 80
4C14400-60 60 30 15 15 40 70
4C144...
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