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AS4C1M16E5 Datasheet, Equivalent, CMOS DRAM.5V 1M x 16 CMOS DRAM 5V 1M x 16 CMOS DRAM |
| Part | AS4C1M16E5 |
|---|---|
| Description | 5V 1M x 16 CMOS DRAM |
| Feature | $XJXVW
$6&0(
9 0î &0 26 '5$0 ('2 )HDWXUHV
• Organization : 1,048,576 words × 16 bits • High s peed - 45/50/60 ns RAS access time - 20 /20/25 ns hyper page cycle time - 10/12 /15 ns CAS access time • 1024 refres h cycles, 16 ms refresh interval - RAS- only or CAS-before-RAS refresh Read-mod ify-write • TTL-compatible, three-st ate DQ • JEDEC standard package and p inout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 • Low power consump tion - Active: 740 mW max (AS4C1M16E5-6 0) - Standby: 5. 5 mW max, CMOS DQ • 5V power supply • Industrial and com mercial temperature available • . |
| Manufacture | Alliance Semiconductor |
| Datasheet |
| Part | AS4C1M16E5 |
|---|---|
| Description | 5V 1M x 16 CMOS DRAM |
| Feature | $XJXVW
$6&0(
9 0î &0 26 '5$0 ('2 )HDWXUHV
• Organization : 1,048,576 words × 16 bits • High s peed - 45/50/60 ns RAS access time - 20 /20/25 ns hyper page cycle time - 10/12 /15 ns CAS access time • 1024 refres h cycles, 16 ms refresh interval - RAS- only or CAS-before-RAS refresh Read-mod ify-write • TTL-compatible, three-st ate DQ • JEDEC standard package and p inout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 • Low power consump tion - Active: 740 mW max (AS4C1M16E5-6 0) - Standby: 5. 5 mW max, CMOS DQ • 5V power supply • Industrial and com mercial temperature available • . |
| Manufacture | Alliance Semiconductor |
| Datasheet |
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