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AS4C1M16E5

Alliance Semiconductor

5V 1M x 16 CMOS DRAM

$XJXVW  Š $6&0( 9 0î &026 '5$0 ('2 )HDWXUHV • Organization: 1,048,576 words × 16 bits • High speed - 45...


Alliance Semiconductor

AS4C1M16E5

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Description
$XJXVW  Š $6&0( 9 0î &026 '5$0 ('2 )HDWXUHV Organization: 1,048,576 words × 16 bits High speed - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write TTL-compatible, three-state DQ JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 Low power consumption - Active: 740 mW max (AS4C1M16E5-60) - Standby: 5.5 mW max, CMOS DQ 5V power supply Industrial and commercial temperature available Extended data out 3LQ DUUDQJHPHQW 62Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 DQ7 DQ8 NC NC WE RAS NC NC A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 V66 DQ16 DQ15 DQ14 DQ13 V66 DQ12 DQ11 DQ10 DQ9 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 V66 V&& DQ1 DQ2 DQ DQ4 V&& DQ5 DQ6 DQ7 DQ8 NC 1 2 3 4 5 6 7 8 9 10 11 3LQ GHVLJQDWLRQ 7623  50 49 48 47 46 45 44 43 42 41 40 V66 DQ16 DQ15 DQ14 DQ13 V66 DQ12 DQ11 DQ10 DQ9 NC Pin(s) A0 to A9 RAS 6HOHFWLRQ JXLGH Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write cycle time Minimum hyper page mode cycle time Maximum operating current Maximum CMOS standby current w w w NC NC WE RAS NC NC A0 A1 A2 A3 V&& .D 15 16 17 18 19 20 21 22 23 24 25 t a 36 35 34 33 32 31 30 29 28 27 26 S a NC...




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