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AS4C256K16E0 Dataheets PDF



Part Number AS4C256K16E0
Manufacturers Alliance Semiconductor
Logo Alliance Semiconductor
Description 5V 256K x 16 CMOS DRAM
Datasheet AS4C256K16E0 DatasheetAS4C256K16E0 Datasheet (PDF)

AS4C256K16E0 ® 5V 256K×16 CMOS DRAM (EDO) Features • Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (AS4C256K16E0-25) - Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25) • EDO page mode • Refresh - 512 refresh cycles, 8 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh - Self-refresh option is available for new generation de.

  AS4C256K16E0   AS4C256K16E0


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