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AS4C256K16E0 Datasheet, Equivalent, CMOS DRAM.5V 256K x 16 CMOS DRAM 5V 256K x 16 CMOS DRAM |
　
　
　
| Part | AS4C256K16E0 |
|---|---|
| Description | 5V 256K x 16 CMOS DRAM |
| Feature | AS4C256K16E0
®
5V 256K×16 CMOS DRAM ( EDO) Features
• Organization: 262,144 words × 16 bits • High speed - 30/3 5/50 ns RAS access time - 16/18/25 ns c olumn address access time - 7/10/10/10 ns CAS access time • Low power consum ption - Active: 500 mW max (AS4C256K16E 0-25) - Standby: 3. 6 mW max, CMOS I/O ( AS4C256K16E0-25) • EDO page mode • Refresh - 512 refresh cycles, 8 ms refr esh interval - RAS-only or CAS-before-R AS refresh or self-refresh - Self-refre sh option is available for new generati on device only. Contact Alliance for mo re information. • Read-modify-write â €¢ TTL-compatible, three-state . |
| Manufacture | Alliance Semiconductor |
| Datasheet |
| Part | AS4C256K16E0 |
|---|---|
| Description | 5V 256K x 16 CMOS DRAM |
| Feature | AS4C256K16E0
®
5V 256K×16 CMOS DRAM ( EDO) Features
• Organization: 262,144 words × 16 bits • High speed - 30/3 5/50 ns RAS access time - 16/18/25 ns c olumn address access time - 7/10/10/10 ns CAS access time • Low power consum ption - Active: 500 mW max (AS4C256K16E 0-25) - Standby: 3. 6 mW max, CMOS I/O ( AS4C256K16E0-25) • EDO page mode • Refresh - 512 refresh cycles, 8 ms refr esh interval - RAS-only or CAS-before-R AS refresh or self-refresh - Self-refre sh option is available for new generati on device only. Contact Alliance for mo re information. • Read-modify-write â €¢ TTL-compatible, three-state . |
| Manufacture | Alliance Semiconductor |
| Datasheet |
　
　
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