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AS4C256K16E0 Datasheet, Equivalent, CMOS DRAM.

5V 256K x 16 CMOS DRAM

5V 256K x 16 CMOS DRAM

 

 

 

Part AS4C256K16E0
Description 5V 256K x 16 CMOS DRAM
Feature AS4C256K16E0 ® 5V 256K×16 CMOS DRAM ( EDO) Features
• Organization: 262,144 words × 16 bits
• High speed - 30/3 5/50 ns RAS access time - 16/18/25 ns c olumn address access time - 7/10/10/10 ns CAS access time
• Low power consum ption - Active: 500 mW max (AS4C256K16E 0-25) - Standby: 3.
6 mW max, CMOS I/O ( AS4C256K16E0-25)
• EDO page mode
• Refresh - 512 refresh cycles, 8 ms refr esh interval - RAS-only or CAS-before-R AS refresh or self-refresh - Self-refre sh option is available for new generati on device only.
Contact Alliance for mo re information.

• Read-modify-write TTL-compatible, three-state .
Manufacture Alliance Semiconductor
Datasheet
Download AS4C256K16E0 Datasheet
Part AS4C256K16E0
Description 5V 256K x 16 CMOS DRAM
Feature AS4C256K16E0 ® 5V 256K×16 CMOS DRAM ( EDO) Features
• Organization: 262,144 words × 16 bits
• High speed - 30/3 5/50 ns RAS access time - 16/18/25 ns c olumn address access time - 7/10/10/10 ns CAS access time
• Low power consum ption - Active: 500 mW max (AS4C256K16E 0-25) - Standby: 3.
6 mW max, CMOS I/O ( AS4C256K16E0-25)
• EDO page mode
• Refresh - 512 refresh cycles, 8 ms refr esh interval - RAS-only or CAS-before-R AS refresh or self-refresh - Self-refre sh option is available for new generati on device only.
Contact Alliance for mo re information.

• Read-modify-write TTL-compatible, three-state .
Manufacture Alliance Semiconductor
Datasheet
Download AS4C256K16E0 Datasheet

AS4C256K16E0

AS4C256K16E0
AS4C256K16E0

AS4C256K16E0

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