AS4C4M4

16 Me g FPM DRAM Meg Austin Semiconductor, Inc. 4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT AVAILABLE AS MILITARY SPECIFICATIONS MIL-STD-883 Vcc DQ0 DQ1 W\ RAS\ NC AS4C4M4 PIN ASSIGNMENT (Top View) 24 Pin TSOP (DG) 1 2 3 4 5 6 24 23 22 21 20 19 Vss DQ3 DQ2 CAS\ OE\ A9 FEATURES Fast Page Mode Operation CAS\-before-RAS\ Refresh Capability RAS\-only and Hidden Refresh Capability Self-refresh Capability Fast Parallel Test Mode Capability TTL Compatible Inputs and Outputs Early Write or Output Enable Controlled Write JEDEC Standard Pinout Single +5V (±10%) Power Supply OPTIONS Timing 60ns access 70ns access Package Plastic TSOP, 24-pin MARKINGS -6 -7 PIN ASSIGNMENT DG Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other features include CAS\-before-RAS\, RAS\-only refresh, and Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM is fabricated using an advanced CMOS process to realize high bandwidth, low power consumption and high reliability. It may be used as main memory for high level computers, microcomputers and personal computers. w w .D w XT IT t a S a e h W\ t e A10 A0 A1 A2 A3 Vcc U 4 7 8 9 10 11 12 .c...