LM6361 Amplifier Datasheet

LM6361 Datasheet, PDF, Equivalent


Part Number

LM6361

Description

High Speed Operational Amplifier

Manufacture

National Semiconductor

Total Page 11 Pages
Datasheet
Download LM6361 Datasheet


LM6361
May 1999
LM6161/LM6261/LM6361
High Speed Operational Amplifier
General Description
The LM6161 family of high-speed amplifiers exhibits an ex-
cellent speed-power product in delivering 300 V/µs and
50 MHz unity gain stability with only 5 mA of supply current.
Further power savings and application convenience are pos-
sible by taking advantage of the wide dynamic range in oper-
ating supply voltage which extends all the way down to +5V.
These amplifiers are built with National’s VIP(Vertically In-
tegrated PNP) process which provides fast PNP transistors
that are true complements to the already fast NPN devices.
This advanced junction-isolated process delivers high speed
performance without the need for complex and expensive di-
electric isolation.
Features
n High slew rate 300 V/µs
n High unity gain freq 50 MHz
n Low supply current 5 mA
n Fast settling 120 ns to 0.1%
n Low differential gain <0.1%
n Low differential phase 0.1˚
n Wide supply range 4.75V to 32V
n Stable with unlimited capacitive load
n Well behaved; easy to apply
Applications
n Video amplifier
n High-frequency filter
n Wide-bandwidth signal conditioning
n Radar
n Sonar
Connection Diagrams
10–Lead Flatpak
DS009057-13
See NS Package Number W10A
Military
−55˚C TA +125˚C
Temperature Range
Industrial
−25˚C TA +85˚C
LM6261N
LM6161J/883
5962-8962101PA
LM6261M
LM6161WG/883
5962-8962101XA
LM6161W/883
5962-8962101HA
DS009057-5
See NS Package Number J08A,
N08E or M08A
Commercial
0˚C TA +70˚C
LM6361N
LM6361J
LM6361M
Package
NSC
Drawing
8-Pin
Molded DIP
8-Pin
Ceramic DIP
8-Pin Molded
Surface Mt.
10-Lead
Ceramic SOIC
10-Pin
Ceramic Flatpak
N08E
J08A
M08A
WG10A
W10A
VIPis a trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS009057
www.national.com

LM6361
Absolute Maximum Ratings (Note 12)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V+ − V)
Differential Input Voltage
(Note 8)
Common-Mode Voltage Range
(Note 10)
Output Short Circuit to GND
(Note 1)
Soldering Information
Dual-In-Line Package (N, J)
Soldering (10 sec.)
Small Outline Package (M)
Vapor Phase (60 sec.)
Infrared (15 sec.)
36V
±8V
(V+ − 0.7V) to (V+ 0.7V)
Continuous
260˚C
215˚C
220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Storage Temp Range
−65˚C to +150˚C
Max Junction Temperature
150˚C
ESD Tolerance (Notes 6, 7)
±700V
Operating Ratings (Note 12)
Temperature Range (Note 2)
LM6161
LM6261
LM6361
Supply Voltage Range
−55˚C TJ +125˚C
−25˚C TJ +85˚C
0˚C TJ +70˚C
4.75V to 32V
DC Electrical Characteristics
The following specifications
Boldface limits apply for TJ
apply for Supply
= TMIN to TMAX;
Voltage = ±15V,
all other limits TJ
V=C2M5˚=C.0,
RL
100
k
and
RS
=
50
unless
otherwise
noted.
Symbol
Parameter
Conditions
Typ
LM6161
LM6261
LM6361 Units
Limit
Limit
Limit
(Notes 3, 11)
(Note 3)
(Note 3)
VOS Input Offset Voltage
57
10
7 20 mV
9 22 Max
VOS Input Offset Voltage
Drift Average Drift
10
µV/˚C
Ib Input Bias Current
23
6
3 5 µA
5 6 Max
IOS Input Offset Current
150 350
800
350
1500
nA
600
1900
Max
IOS Input Offset Current
Drift Average Drift
0.4
nA/˚C
RIN
CIN
AVOL
Input Resistance
Input Capacitance
Large Signal
Voltage Gain
VCM
Input Common-Mode
Voltage Range
Differential
AV = +1 @ 10 MHz
VOUT = ±10V,
RL = 2 k(Note 9)
RL = 10 k(Note 9)
Supply = ±15V
325
1.5
750
2900
+14.0
550
300
+13.9
+13.8
550
400
+13.9
+13.8
400
350
+13.8
+13.7
k
pF
V/V
Min
V/V
Volts
Min
−13.2
−12.9
−12.9
−12.8
Volts
−12.7
−12.7
−12.7
Min
Supply = +5V
4.0 3.9
3.9 3.8 Volts
(Note 4)
3.8 3.8 3.7 Min
1.8 2.0
2.0 2.1 Volts
2.2 2.2 2.2 Max
CMRR
PSRR
Common-Mode
Rejection Ratio
Power Supply
−10V VCM +10V
±10V V± ±16V
94
90
80
74
80
80 72 dB
76 70 Min
80 72 dB
Rejection Ratio
74 76 70 Min
www.national.com
2


Features LM6161/LM6261/LM6361 High Speed Operatio nal Amplifier May 1999 LM6161/LM6261/ LM6361 High Speed Operational Amplifier General Description The LM6161 family of high-speed amplifiers exhibits an ex cellent speed-power product in deliveri ng 300 V/µs and 50 MHz unity gain stab ility with only 5 mA of supply current. Further power savings and application convenience are possible by taking adva ntage of the wide dynamic range in oper ating supply voltage which extends all the way down to +5V. These amplifiers a re built with National’s VIP™ (Vert ically Integrated PNP) process which pr ovides fast PNP transistors that are tr ue complements to the already fast NPN devices. This advanced junction-isolate d process delivers high speed performan ce without the need for complex and exp ensive dielectric isolation. n n n n n n n n High unity gain freq 50 MHz Low s upply current 5 mA Fast settling 120 ns to 0.1% Low differential gain < 0.1% L ow differential phase 0.1˚ Wide supply range 4.75V to 32V Stable wit.
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