STK630F

Semiconductor STK630F Power MOSFET Features Avalanche rugged technology. Low input capacitance. Low leakage current : 10 ㎂ (Max.) @ VDS=200V. Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. STK630F Marking STK630 Package Code TO-220F-3L Outline Dimensions w w w t a .D S a e h U 4 t e .c m o unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H036-002 w w w .D a S a t e e h U 4 t m o .c 1 STK630F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Drain power dissipation (TC=25℃) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Peak diode recovery dv/dt Junction temperature Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS ID IDP PD ② ① ① ③ EAS IAR EAR dv/dt TJ Tstg Rating 200 ±30 TC=25℃ TC=100℃ 36 30 162 9 7.2 5.0 150 -55~150 9 5.7 Unit V V A A A W mJ A mJ V/㎱ °C °C Thermal Resistance Characteristic Thermal resistance junction-case Thermal resistance junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 4.16 62.5 Units ℃/W KST-H036-002 2 STK630F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Static drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall...