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2SC1576 Datasheet, Equivalent, NPN Transistor.Silicon NPN Transistor Silicon NPN Transistor |
| Part | 2SC1576 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | :
SILICON NPN TRIPLE DIFFUSED TYPE
REGU LATOR APPLICATIONS. HIGH VOLTAGE SWITCH ING APPLICATIONS. FEATURES • High Vol tage : VCBO=450V • Low Saturation Vol tage : : VC E(sat)= 1. 5V (Max. ) (I C =5 A, I B =0. 8A) • High Speed Switching Time : t s tg=3. 0ys (Typ. ) INDUSTRIAL APPLICATIONS Unit in ram MAXIMUM RATIN GS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitte r Voltage v CBO v CEO Emitter-Base Vo ltage Vebo Collector Current ic Bas e Current Collector Power Dissipa- ti on (Tc=25°C) Junction Temperature S torage Temperature Range IB PC T j Tst g RATING 450 330 6 8 . |
| Manufacture | Toshiba |
| Datasheet |
| Part | 2SC1576 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | :
SILICON NPN TRIPLE DIFFUSED TYPE
REGU LATOR APPLICATIONS. HIGH VOLTAGE SWITCH ING APPLICATIONS. FEATURES • High Vol tage : VCBO=450V • Low Saturation Vol tage : : VC E(sat)= 1. 5V (Max. ) (I C =5 A, I B =0. 8A) • High Speed Switching Time : t s tg=3. 0ys (Typ. ) INDUSTRIAL APPLICATIONS Unit in ram MAXIMUM RATIN GS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitte r Voltage v CBO v CEO Emitter-Base Vo ltage Vebo Collector Current ic Bas e Current Collector Power Dissipa- ti on (Tc=25°C) Junction Temperature S torage Temperature Range IB PC T j Tst g RATING 450 330 6 8 . |
| Manufacture | Toshiba |
| Datasheet |
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