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28F640W18 Datasheet, Equivalent, Flash Memory.(28FxxxW18) 1.8 V Wireless Flash Memory (28FxxxW18) 1.8 V Wireless Flash Memory |
| Part | 28F640W18 |
|---|---|
| Description | (28FxxxW18) 1.8 V Wireless Flash Memory |
| Feature | 1. 8 Volt Intel® Wireless Flash Memory ( W18) 28F320W18, 28F640W18, 28F128W18 P reliminary Datasheet Product Features Performance — 70 ns Asynchronous read s for 32 and 64 Mbit, 90 ns for 128 Mbi t — 14 ns Clock to Data Output (tCHQV ) — 20 ns Page Mode Read Speed — 4- Word, 8-Word, and Continuous-Word Burst Modes — Burst and Page Modes in Para meter and Main Partitions — Programma ble WAIT Configuration — Enhanced Fac tory Programming Mode@ 3. 50 µs/Word (T yp) — Glueless 12 V interface for Fas t Factory Programming @ 8 µs/Word (Typ ) — 1. 8 V Low-Power Programming @ 12 µs/Word (Typ) — Program or Erase du . |
| Manufacture | Intel |
| Datasheet |
| Part | 28F640W18 |
|---|---|
| Description | (28FxxxW18) 1.8 V Wireless Flash Memory |
| Feature | 1. 8 Volt Intel® Wireless Flash Memory ( W18) 28F320W18, 28F640W18, 28F128W18 P reliminary Datasheet Product Features Performance — 70 ns Asynchronous read s for 32 and 64 Mbit, 90 ns for 128 Mbi t — 14 ns Clock to Data Output (tCHQV ) — 20 ns Page Mode Read Speed — 4- Word, 8-Word, and Continuous-Word Burst Modes — Burst and Page Modes in Para meter and Main Partitions — Programma ble WAIT Configuration — Enhanced Fac tory Programming Mode@ 3. 50 µs/Word (T yp) — Glueless 12 V interface for Fas t Factory Programming @ 8 µs/Word (Typ ) — 1. 8 V Low-Power Programming @ 12 µs/Word (Typ) — Program or Erase du . |
| Manufacture | Intel |
| Datasheet |
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