IRLR024N

PD- 91363E IRLR024N IRLU024N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.065Ω ID = 17A Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak I-Pak IRLR024N IRLU024N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 72 45 0.3 ± 16 68 11 4.5 5.0 -55 to + 175 300 (1.6m...