EGN21A090IV

Eudyna GaN-HEMT 90W Preliminary FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB(typ.) at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability EGN21A090IV High Voltage - High Power GaN-HEMT DESCRIPTION The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item Symbol VDS IGF IGR Tch DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Min. -1.0 14.0 Pinch-Off Voltage Vp VDS=50V IDS=36mA VDS=50V Gate-Drain Breakdown Voltage Power Gain 3rd Order Inter modulation Distortion Drain Efficiency Thermal Resistance w e m h i l S e a r t P Da . w w Condition RG=5 Ω RG=5 Ω VGDO IM3 Gp ηd Rth Note 1 t a ine Rating Limit 50 <19.4 >-7.2 200 120 -5 160 -65 to +175 250 c . y U r 4 Unit V V W oC oC m o Unit V mA mA ...