DN2530

DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 300V * Same as SOT-89. RDS(ON) (max) 12Ω IDSS (min) 200mA Order Number / Package TO-92 DN2530N3 TO-243AA* DN2530N8 Product marking for TO-243AA: DN5T❋ Product shipped on 2000 piece carrier tape reels. Where ❋ = 2-week alpha date code Features ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Advanced DMOS Technology Not recommended for new designs. Please use DN3535 or DN3545 instead. These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Normally-on switches ❏ Solid state relays ❏ Converters ❏ Linear amplifiers ❏ Constant current sources ❏ Power supply circuits ❏ Telecom Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate...