Silicon N-Channel MOSFET
H5N5004PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1381 (Z) Target Specification 1st. Edition Mar. ...
Description
H5N5004PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features
Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ
Outline
TO-3PL
w
w
.D w
G
t a
D S
S a
1 2
e h
3
t e
U 4
.c
m o
1. Gate 2. Drain (Flange) 3. Source
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
H5N5004PL
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 3. Tch 150°C Symbol VDSS VGSS ID ID
Note1 (pulse)
Ratings 500 ±30 50 200 50
Unit V V A A A A A W °C/W °C °C
I DR I DR
Note1 (pulse)
200 15 250 0.5 150 –55 to +150
I AP Note3 Pch
Note2
θ ch-c Tch Tstg
2
H5N5004PL
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 500 — — 2.0 — 27 — — — — — — — — — — — — — Typ — — — — 0.09 45 7630 770 160 90 340 370 280 220 30 110 0.98 190 1.3 Max — ±0.1 10 4.0 0.11 — — — — — — ...
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