H5N5001FM

H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 Ω typ. : I DSS =1 µA max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A) : Qg = 15nC typ (at VDD = 400 V, V GS = 10 V, I D = 5 A) Outline TO–220FM w w .D w G t a D S S a e h t e U 4 .c m o 1 2 1. Gate 2. Drain 3. Source 3 w w w .D a S a t e e h U 4 t m o .c H5N5001FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Tch ≤150°C Symbol VDSS VGSS ID I D(pulse) I DR I DR(pulse) I AP Note3 Pch Note2 Note1 Note1 Ratings 500 ±30 5 20 5 20 5 30 4.17 150 –55 to +150 Unit V V A A A A A W °C/W °C °C θ ch-c Tch Tstg 2 H5N5001FM Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 500 — — 3.0 — 3.0 — — — — — — — — — — — — — Typ — — — — 1.1 4.5 580 70 13 20 15 65 15 15 3 8 0.85 400 1.5 Max — ±0.1 1 4.0 1.5 — — — — — — — — — — — 1.3 — — Unit V µA µA V Ω S pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions...