MB81F641642D

FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 × 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-102L s DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 16-bit format. The MB81F641642D features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642D SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM. The MB81F641642D is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed. s PRODUCT LINE & FEATURES Parameter CL - tRCD - tRP Clock Frequency Burst Mode Cycle Time Access Time From Clock Operating Current m o .c U 4 t e e h S a t a .D w w w CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory MB81F641642D -102/-102L -75 Reference Value @66MHz(CL=2) 3 - 3 - 3 clk min. 133 MHz max. 10 ns min. 6 ns max. 6 ns max. 7.5 ns min. 2 - 2 - 2 clk min. 100 MHz max. 10 ns min. 6 ns max. 6 ns max. 10 ns min. 2 - 2 - 2 clk min. 66 MHz max....