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PKC136

ST Microelectronics

PEAK CLAMP

® PKC-136 PEAK CLAMP Application Specific Discretes ASD™ MAIN PRODUCT CHARACTERISTICS VBR VDRM P 160Vdc 700Vdc 1.5W ...


ST Microelectronics

PKC136

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® PKC-136 PEAK CLAMP Application Specific Discretes ASD™ MAIN PRODUCT CHARACTERISTICS VBR VDRM P 160Vdc 700Vdc 1.5W FEATURES Protection of the Mosfet in flyback power supply TRANSIL™ and blocking diode in a single package s s BENEFITS Accurate voltage clamping regardless load Reduced current loop Reduced EMI emission High integration Fast assembly Reduced losses in stand by mode s s s s s s BASIC CONNECTION w Symbol Tstg Tj P w w t a .D S a Lf T D e h U 4 t e Io .c m o DO-15 Vo ABSOLUTE MAXIMUM RATINGS (limiting values) Parameter Storage temperature Junction temperature Maximum power dissipation T°lead = 90°C Value - 40 to + 150 150 Unit August 2001 - Ed: 2A w w w .D a S a t 1.5 e °C e h W U 4 t °C m o .c 1/5 PKC-136 ELECTRICAL CHARACTERISTICS TRANSIL Value Symbol IRM VBR Rd Parameter Leakage current Breakdown voltage Dynamical Resistance Test conditions Min. VR = 136V IR = 1mA pulse test < 50ms tp < 500ns between I = 0.5Amps and I = 1.5Amps Tj = 25°C Tj =125°C Tj = 25°C Tj = 125°C Typ. Max. 1 10 170 4 µA V Ω Unit 150 160 αT VsCL Temperature Coefficient Surge Clamping voltage Ipp = 2.7Amps 10/1000µs 10.8 219 10-4/°C V CALCULATION OF THE CLAMPING VOLTAGE: In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown voltage VBR of the transil versus the operating junction temperature and use the equation (3) to calculate the clamping voltage versus the transil current Ipp and the temperature. ∆V BR =...




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