N-Channel MOSFET. 2SK3310 Datasheet

2SK3310 MOSFET. Datasheet pdf. Equivalent

Part 2SK3310
Description N-Channel MOSFET
Feature 2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regul.
Manufacture Toshiba Semiconductor
Total Page 6 Pages
Datasheet
Download 2SK3310 Datasheet



2SK3310
2SK3310
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.48 (typ.)
High forward transfer admittance: |Yfs| = 4.3 S (typ.)
Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
Rating
450
450
±30
10
40
40
222
10
4
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2004-07-06



2SK3310
2SK3310
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate -source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ ±10
±30
⎯ ⎯ 100
450
3.0 5.0
0.48 0.65
1.5 4.3
920
12
140
µA
V
µA
V
V
S
pF
tr VG1S0 V
0V
ton
ID = 5 A
VOUT
25
35
RL = 40
ns
tf 10
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
60
Qg
Qgs VDD ∼− 360 V, VGS = 10 V, ID = 10 A
Qgd
23
9 nC
14
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯ ⎯ 10 A
⎯ ⎯ 40 A
⎯ −1.7
V
280
ns
2.7 ⎯ µC
Marking
K3310
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-06





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