128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
128Mb F-die SDRAM Specification
m o .c U 4 54 TSOP-II with Pb-Free t e (Ro...
Description
SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
128Mb F-die SDRAM Specification
m o .c U 4 54 TSOP-II with Pb-Free t e (RoHS compliant) e h S a t a .D w Revision 1.2 w August 2004 w
* Samsung Electronics reserves the right to change products or specification without notice.
m o .c U 4 t e e h S a Rev. at1.2 August 2004 .D w w w
SDRAM 128Mb F-die (x4, x8, x16)
Revision History
Revision 1.0 (January, 2004) - First release. Revision 1.1 (May, 2004) Added Note 5. sentense of tRDL parameter. Revision 1.2 (August, 2004) Corrected typo.
CMOS SDRAM
Rev. 1.2 August 2004
SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM (x4,x8) & L(U)DQM (x16) for masking Auto & self refresh 64ms refresh period (4K Cycle) 54 TSOP(II) Pb-free Package RoHS compliant
GENERAL DESCRIPTION
The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchron...
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