N-Channel MOSFET. 2SK3563 Datasheet

2SK3563 MOSFET. Datasheet pdf. Equivalent

Part 2SK3563
Description N-Channel MOSFET
Feature DataSheet.in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563.
Manufacture Toshiba Semiconductor
Total Page 3 Pages
Datasheet
Download 2SK3563 Datasheet



2SK3563
DataSheet.in
TENTATIVE
2SK3563
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
2SK3563
Switching Regulator Applications
unit:mm
Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
High forward transfer admittance: |Yfs| = 3.5S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 500 V)
Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
10±0.3
φ3.2±0.2
2.7±0.2
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
500
500
±30
5
20
35
180
5
3.5
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1.1
1.1
0.69±0.15
2.54±0.25
2.54±0.25
123
1. Gate
2. Drain
3. Source
JEDEC
JEITA
TOSHIBA
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.57 °C/W
62.5 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
1 2003-01-27



2SK3563
DataSheet.in
Electrical Characteristics (Ta = 25°C)
2SK3563
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±25 V, VDS = 0 V
ID = ±10 µA, VGS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
15
ID = 2.5 A VOUT
RL =
90
VDD ∼− 225 V
Duty <= 1%, tw = 10 µs
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 5 A
Qgd
Min
±30
500
2.0
1.5
Typ.
1.35
3.5
550
7
70
10
20
10
50
16
10
6
Max
±10
100
4.0
1.50
Unit
µA
V
µA
V
V
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
 5 A
  20 A
  −1.7 V
1400
ns
9  µC
Marking
K3563
TYPE
Lot Number
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2 2003-01-27





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)