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2SK3563 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | 2SK3563 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | DataSheet. in TENTATIVE TOSHIBA Field Ef fect Transistor Silicon N Channel MOS T ype (π-MOSⅥ) 2SK3563 2SK3563 unit ｍｍ Switching Regulator Applicati ons 10±0. 3 Maximum Ratings (Ta = 25° C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gat e-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3. 5 150 -55~150 A W mJ A m J °C °C Unit 0. 69±0. 15 2. 8Max V V V 2. 54±0. 25 0. 64±0. 15 2. 54±0. 25 2. 6 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | 2SK3563 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | DataSheet. in TENTATIVE TOSHIBA Field Ef fect Transistor Silicon N Channel MOS T ype (π-MOSⅥ) 2SK3563 2SK3563 unit ｍｍ Switching Regulator Applicati ons 10±0. 3 Maximum Ratings (Ta = 25° C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gat e-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3. 5 150 -55~150 A W mJ A m J °C °C Unit 0. 69±0. 15 2. 8Max V V V 2. 54±0. 25 0. 64±0. 15 2. 54±0. 25 2. 6 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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