DataSheet.in
TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)
2SK3563
2SK3563
unit:mm
Switching Regulator Applications
10±0.3
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rat...