2SD2253 Power Transistor Datasheet

2SD2253 Datasheet, PDF, Equivalent


Part Number

2SD2253

Description

Silicon NPN Triple Diffused Power Transistor

Manufacture

Wing Shing Computer Components

Total Page 1 Pages
Datasheet
Download 2SD2253 Datasheet


2SD2253
2SD2253
Silicon NPN Triple Diffused Power Transistor
GENERAL DESCRIPTION
HORIZONAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION DISPLAY, COLOR TV
High Speed Switching Applications
QUICK REFERENCE DATA
SYMBOL
VCB0
VCEO
IC
ICM
Ptot
VCEsat
PARAMETER
Collector-Base voltage
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
VF Diode forward voltage
tf Fall time
CONDITIONS
TO-3PM
-
Tmb 25
IC = 5.0A; IB = 1.0A
IF = 6.0A
ICsat = 6.0A; f = 16KHz
TYP MAX UNIT
-
1700
V
- 600 V
- 6A
- 12 A
- 50 W
- 5V
1.6 2.0
V
0.3 0.7
s
LIMITING VALUES
SYMBOL
VCB0
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-Base voltage
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
Tmb 25
MIN MAX UNIT
- 1700 V
- 600 V
- 6A
- 12 A
- 3A
-A
- 50 W
-55 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE0
PARAMETER
Collector cut-off current
CONDITIONS
VCB =170 0V;
IE=0x
TYP MAX UNIT
- 1.0 mA
VCEsat
VBEsat
hFE
VF
fT
t
tf
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency
Turn-off storage time Turn-off fall time
IC = 5.0A; IB = 1.0A
IC = 5.0A; IB = 1.0A
IC = 1A; VCE = 5V
IF = 6.0A
IC = 0.1A; VCE = 10V
IC=6A,IB(end)=1.5A,
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: ws@wingshing.com
- 5V
- 1.2 V
8 28
1.6 2.0
V
1 - MHz
0.3 0.7
s


Features 2SD2253 Silicon NPN Triple Diffused Pow er Transistor GENERAL DESCRIPTION HORI ZONAL DEFLECTION OUTPUT FOR HIGH RESOLU TION DISPLAY, COLOR TV High Speed Switc hing Applications QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS TYP VCB0 VC EO IC ICM Ptot VCEsat VF tf PARAMETER Collector-Base voltage Collector-emitte r voltage (open base) Collector current (DC) Collector current peak value Tota l power dissipation Collector-emitter s aturation voltage Diode forward voltage Fall time - Tmb 25 IC = 5.0A; IB = 1 .0A IF = 6.0A ICsat = 6.0A; f = 16KHz 1.6 0.3 MAX 1700 600 6 12 50 5 2.0 0. 7 UNIT V V A A W V V s LIMITING VALUE S SYMBOL VCB0 VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-Base volta ge Collector-emitter voltage (open base ) Collector current (DC) Collector curr ent peak value Base current (DC) Base c urrent peak value Total power dissipati on Storage temperature Junction tempera ture CONDITIONS Tmb 25 MIN -55 - MA X 1700 600 6 12 3 50 150 150 UNIT V V A A A A W ELECTRICAL CH.
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