HAT3010R

HAT3010R Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-1402F (Z) 7th. Edition Feb. 2002 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch www.DataSheet4U.com www.DataSheet4U.com HAT3010R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse) IDR Pch Pch Tch Tstg Note2 Note3 Note1 Unit Pch –60 ±20 –5 –40 –5 2 3 150 –55 to +150 V V A A A W W °C °C 60 ±20 6 48 6 2 3 150 –55 to +150 Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Rev.6, Feb. 2002, page 2 of 14 HAT3010R Electrical Characteristics (Ta = 25°C) N Channel Item Symbol Min 60 ±20 — — 1.0 — — 7 — — — — — — — — — Typ — — — — — 30 40 11 1050 150 90 15 15 55 10 0.85 50 Max — — ±10 1 2.5 38 60 — — — — — — — — 1.10 — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 3 A, VGS = 10 V ID = 3 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VG...