2SD2057 type Transistor Datasheet

2SD2057 Datasheet, PDF, Equivalent


Part Number

2SD2057

Description

Silicon NPN triple diffusion planar type Transistor

Manufacture

Panasonic Semiconductor

Total Page 2 Pages
Datasheet
Download 2SD2057 Datasheet


2SD2057
Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s Features
q Incorporating a built-in damper diode
q Reduction of a parts count and simplification of a circuit are al-
lowed
q High breakdown voltage with high reliability
q High-speed switching
q Wide area of safe operation (ASO)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VEBO
ICP
IC
IB
PC
1500
1500
7
20
5
4
100
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
15.0±0.3
11.0±0.2
5.0±0.2
3.2
φ3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(b)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
VEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VF
Conditions
min typ max Unit
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
30 µA
300 µA
IE = 500mA, IC = 0
7
V
VCE = 10V, IC = 5A
4.5 15
IC = 5A, IBw= 1.2wA w.DataShee8t4UV .com
IC = 5A, IB = 1.2A
1.5 V
VCE = 10V, IC = 1A, f = 0.5MHz
IC = 5A, IB1 = 1.2A, IB2 = –1.2A,
Lleak = 5µH
2 MHz
12 µs
0.8 µs
IC = –6A, IB = 0
–2.3 V
www.DataSheet4U.com
1

2SD2057
Power Transistors
PC — Ta
120
(1) TC=Ta
(2) With a 100 × 100 × 2mm
100 Al heat sink
(3) Without heat sink
(1) (PC=3W)
80
60
40
20
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
10
TC=25˚C
8 IB=1.6A
1.4A
1.2A
1A
6 0.8A
0.6A
0.4A
4
0.2A
2
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2057
VCE(sat) — IC
3 IC/IB=2
1
0.3
0.1
0.03
25˚C TC=–25˚C
100˚C
0.01
0.1
0.3 1 3
Collector current IC (A)
10
VBE(sat) — IC
3
25˚C
1 TC=100˚C
–25˚C
0.3
IC/IB=2
0.1
0.03
0.01
0.1
0.3 1 3
Collector current IC (A)
10
1000
300
100
hFE — IC
VCE=10V
30
10
TC=100˚C
3 25˚C
–25˚C
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
30 ICP
10 IC
3
1
50ms
DC
t=1ms
10ms
0.3
0.1
0.03
0.01 Non repetitive pulse
TC=25˚C
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Area of safe operation, horizontal operation ASO
24
20 ICP
16
f=15.75kHz, TC=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
12
8
4
<1mA
0
0 400 800 1200 1600 2000
Collector to emitter voltage VCE (V)
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
10
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2


Features Power Transistors 2SD2057 Silicon NPN t riple diffusion planar type For horizon tal deflection output Unit: mm s Featu res q q 15.0± 0.3 11.0± 0.2 Solder Dip q q q 16.2± 0.5 3.2 2.3 q Inco rporating a built-in damper diode Reduc tion of a parts count and simplificatio n of a circuit are allowed High breakdo wn voltage with high reliability High-s peed switching Wide area of safe operat ion (ASO) Full-pack package which can b e installed to the heat sink with one s crew (TC=25˚C) Ratings 1500 1500 7 20 5 4 100 3 150 –55 to +150 Unit V V V A A A W ˚C ˚C 21.0± 0.5 15.0± 0.2 0.7 5.0± 0.2 3.2 φ3.2± 0.1 2.0± 0.2 1.1± 0.1 2.0± 0.1 0.6± 0.2 5. 45± 0.3 10.9± 0.5 1 2 3 s Absolute M aximum Ratings Parameter Collector to b ase voltage Collector to emitter voltag e Emitter to base voltage Peak collecto r current Collector current Base curren t Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage t emperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter .
Keywords 2SD2057, datasheet, pdf, Panasonic Semiconductor, Silicon, NPN, triple, diffusion, planar, type, Transistor, SD2057, D2057, 2057, 2SD205, 2SD20, 2SD2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)