IS62WV5128ALL

IS62WV5128ALL IS62WV5128BLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2008 FEATURES High-speed access time: 55ns, 70ns CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby TTL compatible interface levels Single power supply 1.65V – 2.2V VDD (IS62WV5128ALL) 2.5V – 3.6V VDD (IS62WV5128BLL) Fully static operation: no clock or refresh required Three state outputs Industrial temperature available Lead-free available DESCRIPTION The ISSI IS62WV5128ALL / IS62WV5128BLL are high- speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV5128ALL and IS62WV5128BLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin sTSOP (TYPE I), 32-pin TSOP (Type II), 32-pin SOP and 36-pin mini BGA. FUNCTIONAL BLOCK DIAGRAM A0-A18 VDD GND I/O0-I/O7 DECODER I/O DATA CIRCUIT 512K x 8 MEMORY ARRAY COLUMN I/O CS1 OE WE CONTROL CIRCUIT Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI rese...