STE45NK80ZD

STE45NK80ZD N-CHANNEL 800V - 0.11Ω - 45 A ISOTOP Super FREDMesh™ MOSFET Table 1: General Features TYPE STE45NK80ZD s s s s s s Figure 1: Package ID 45 A Pw 600 W VDSS 800 V RDS(on) < 0.13 Ω TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY ISOTOP DESCRIPTION The SuperFREDMesh™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR WELDING EQUIPMENT Table 2: Order Codes SALES TYPE STE45NK80ZD MARKING E45NK80ZD PACKAGE ISOTOP PACKAGING TUBE Rev. 6 April 2005 1/10 www.DataSheet4U.com STE45NK80ZD Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID IDM (*) PTOT PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C (Steady State) Derating Factor Gate source ESD(HBM-C=100pF, R=1.5kΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (AC-RMS...