SST28SF040A

4 Mbit (512K x8) SuperFlash EEPROM SST28SF040A / SST28VF040A SST28SF040A / SST28VF040A5.0 & 2.7 4Mb (x8) Byte-Program, Small Erase Sector flash memories Data Sheet FEATURES: Single Voltage Read and Write Operations – 5.0V-only for SST28SF040A – 2.7-3.6V for SST28VF040A Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Memory Organization: 512K x8 Sector-Erase Capability: 256 Bytes per Sector Low Power Consumption – Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 2.7-3.6V – Standby Current: 5 µA (typical) Fast Sector-Erase/Byte-Program Operation – Byte-Program Time: 35 µs (typical) – Sector-Erase Time: 2 ms (typical) – Complete Memory Rewrite: 20 sec (typical) Fast Read Access Time – 5.0V-only operation: 90 and 120 ns – 2.7-3.6V operation: 150 and 200 ns Latched Address and Data Hardware and Software Data Protection – 7-Read-Cycle-Sequence Software Data Protection End-of-Write Detection – Toggle Bit – Data# Polling TTL I/O Compatibility JEDEC Standard – Flash EEPROM Pinouts Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm and 8mm x 20mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS SectorErase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared...