MPS2907A

MPS2907A Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg –55 to +150 Watts mW/°C °C 1 2 3 mW mW/°C TO–92 CASE 29 STYLES 1, 14 Value –60 –60 –5.0 –600 Unit Vdc Vdc Vdc mAdc 1 EMITTER STYLE 1 2 BASE MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range MARKING DIAGRAMS Unit °C/W °C/W Y WW = Year = Work Week MPS2 907A YWW THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RθJA RθJC Max 200 83.3 ORDERING INFORMATION Device MPS2907A MPS2907ARLRA MPS2907ARLRE MPS2907ARLRM MPS2907ARLRP Package TO–92 TO–92 TO–92 TO–92 TO–92 Shipping 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 2000/Ammo Pack 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2001 1 October, 2001 – Rev. 0 Publication Order Number: MPS2907A/D www.DataSheet4U.com MPS2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 1.) (IC = –10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter–Base Breakd...