DatasheetsPDF.com

IRFZ34E Dataheets PDF



Part Number IRFZ34E
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFZ34E DatasheetIRFZ34E Datasheet (PDF)

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Ease of Paralleling Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely .

  IRFZ34E   IRFZ34E


Document
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Ease of Paralleling Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 9.1672A IRFZ34E HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.042Ω ID = 28A S TO-220AB Max. 28 20 112 68 0.46 ± 20 97 17 6.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Min. –––– –––– –––– Typ. –––– 0.50 –––– Max. 2.2 –––– 62 Units °C/W 11/4/97 IRFZ34E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) gfs Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. Typ. Max. Units 60 ––– ––– V ––– 0.056 ––– V/°C ––– ––– 0.042 Ω 2.0 ––– 4.0 V 7.6 ––– ––– S ––– ––– 25 µA ––– ––– 250 ––– ––– 100 nA ––– ––– -100 ––– ––– 30 ––– ––– 6.7 nC ––– ––– 12 ––– 5.1 ––– ––– 30 ––– ns ––– 22 ––– ––– 30 ––– ––– 4.5 ––– nH ––– 7.5 ––– ––– 680 ––– ––– 220 ––– pF ––– 80 ––– Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 17A„ VDS = VGS, ID = 250µA VDS = 25V, ID = 17A VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 17A VDS = 48V VGS = 10V, See Fig. 6 and 13 „ VDD = 30V ID = 17A RG = 13Ω RD = 1.8Ω, See Fig. 10 „ Between lead, D 6mm (0.25in.) from package G and center of die contact S VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol D ––– ––– 28 showing the A integral reverse G ––– ––– 100 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 17A, VGS = 0V „ ––– 63 95 ns TJ = 25°C, IF = 17A ––– 130 200 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 670µH RG = 25Ω, IAS = 17A. (See Figure 12) ƒ ISD ≤ 17 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. ID , Drain-to-Source Current (A) 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 1 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics I D, Drain-to-Source Current (A) IRFZ34E 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 1 0.1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 100 TJ = 25° C TJ = 175° .


IRFZ34A IRFZ34E IRFZ34N


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)