Document
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Ease of Paralleling
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD - 9.1672A
IRFZ34E
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 0.042Ω
ID = 28A
S
TO-220AB
Max. 28 20 112 68 0.46 ± 20 97 17 6.8 5.0
-55 to + 175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A
W W/°C
V mJ A mJ V/ns
°C
Min. –––– –––– ––––
Typ. –––– 0.50 ––––
Max. 2.2 –––– 62
Units °C/W
11/4/97
IRFZ34E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON) VGS(th) gfs
Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units 60 ––– ––– V ––– 0.056 ––– V/°C ––– ––– 0.042 Ω 2.0 ––– 4.0 V 7.6 ––– ––– S ––– ––– 25 µA ––– ––– 250 ––– ––– 100
nA ––– ––– -100 ––– ––– 30 ––– ––– 6.7 nC ––– ––– 12 ––– 5.1 ––– ––– 30 –––
ns ––– 22 ––– ––– 30 –––
––– 4.5 ––– nH
––– 7.5 –––
––– 680 ––– ––– 220 ––– pF ––– 80 –––
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA VGS = 10V, ID = 17A VDS = VGS, ID = 250µA VDS = 25V, ID = 17A
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V
ID = 17A VDS = 48V VGS = 10V, See Fig. 6 and 13 VDD = 30V
ID = 17A
RG = 13Ω
RD = 1.8Ω, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 28
showing the
A
integral reverse
G
––– ––– 100
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 17A, VGS = 0V
––– 63 95 ns TJ = 25°C, IF = 17A
––– 130 200 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 670µH RG = 25Ω, IAS = 17A. (See Figure 12)
ISD ≤ 17 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ID , Drain-to-Source Current (A)
1000 100
VGS TOP 15V
10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
10
4.5V
1
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
I D, Drain-to-Source Current (A)
IRFZ34E
1000 100
VGS TOP 15V
10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
10
4.5V
1
0.1 0.1
20µs PULSE WIDTH TJ = 175 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
I D, Drain-to-Source Current (A)
100
TJ = 25° C
TJ = 175° .