Document
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
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Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34VL) is available for lowprofile application.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted)**
www.irf.com
PD - 94180A
IRFZ34VS IRFZ34VL
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 28mΩ
ID = 30A
S
D2Pak IRFZ34VS
TO-262 IRFZ34VL
Max. 30 21 120 70 0.46 ± 20 30 7.0 4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W W/°C
V A mJ V/ns
°C
Typ. ––– –––
Max. 2.15 40
Units °C/W
1 09/15/09
IRFZ34VS/IRFZ34VL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy
Min. Typ. Max. 60 ––– ––– ––– 0.062 ––– ––– ––– 28 2.0 ––– 4.0 15 ––– ––– ––– ––– 25 ––– ––– 250 ––– ––– 100 ––– ––– -100 ––– ––– 49 ––– ––– 12 ––– ––– 18 ––– 10 ––– ––– 65 ––– ––– 31 ––– ––– 40 –––
––– 4.5 –––
––– 7.5 –––
––– 1120 ––– ––– 250 ––– ––– 59 ––– ––– 260 81
Units V
V/°C mΩ V S µA nA
nC
ns
nH
pF mJ
Conditions
VGS = 0V, ID = 250µA
Refere.