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IRFZ34V Dataheets PDF



Part Number IRFZ34V
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFZ34V DatasheetIRFZ34V Datasheet (PDF)

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides t.

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34VL) is available for lowprofile application. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted)** www.irf.com PD - 94180A IRFZ34VS IRFZ34VL HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 28mΩ ID = 30A S D2Pak IRFZ34VS TO-262 IRFZ34VL Max. 30 21 120 70 0.46 ± 20 30 7.0 4.5 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V A mJ V/ns °C Typ. ––– ––– Max. 2.15 40 Units °C/W 1 09/15/09 IRFZ34VS/IRFZ34VL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance EAS Single Pulse Avalanche Energy‚… Min. Typ. Max. 60 ––– ––– ––– 0.062 ––– ––– ––– 28 2.0 ––– 4.0 15 ––– ––– ––– ––– 25 ––– ––– 250 ––– ––– 100 ––– ––– -100 ––– ––– 49 ––– ––– 12 ––– ––– 18 ––– 10 ––– ––– 65 ––– ––– 31 ––– ––– 40 ––– ––– 4.5 ––– ––– 7.5 ––– ––– 1120 ––– ––– 250 ––– ––– 59 ––– ––– 260 81 Units V V/°C mΩ V S µA nA nC ns nH pF mJ Conditions VGS = 0V, ID = 250µA Refere.


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