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JAN2N2919

New England Semiconductor

(JAN2N2919 / JAN2N2920) Transistor


Description
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 3 October 2005. MIL-PRF-19500/355K 3 July 2005 SUPERSEDING MIL-PRF-19500/355J 8 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON, TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND ...



New England Semiconductor

JAN2N2919

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