MRF5812 Datasheet - Advanced Power Technology





MRF5812 Datasheet - Bipolar Junction Transistor

MRF5812   MRF5812  

Datasheet: MRF5812 datasheet

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Description: MRF5812, R1, R2 MRF5812G, R1, R2 * G Den otes RoHS Compliant, Pb free Terminal F inish Features • • • • Low Noi se - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v , 75mA Cost Effective SO-8 package SO- 8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tc ase = 25°C) Symbol VCEO VCBO VEBO IC P arameter Collector-Emitter Voltage Coll ector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D T otal Device Dissipation @ TC = 25ºC De rate above 25ºC 1.25 10 Watts mW/ ºC Advanced Pow


Manufacture Part Number Description

New Jersey Semiconductor

MRF5812

Trans GP BJT NPN 15V 0.2A 8-Pin SOIC

Advanced Power Technology

MRF5812

Bipolar Junction Transistor

ASI

MRF5812

NPN Silicon RF Microwave Transistor

Advanced Power Technology

MRF5812G

Bipolar Junction Transistor

New Jersey Semiconductor

MRF5812MR1

Trans GP BJT NPN 15V 0.2A 8-Pin SOIC

New Jersey Semiconductor

MRF5812MR2

Trans GP BJT NPN 15V 0.2A 8-Pin SOIC




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