Bipolar Junction Transistor
MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• • • • Low Noise - 2.5 d...
Description
MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package
SO-8
R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005
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MRF5812, R1, R2 MRF5812G, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) Value Min. 15 30 2.5 Typ. Max. 0.1 0.1 Unit Vdc Vdc Vdc mA mA
(on)
HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 50 200
DYNAMIC
Symbol COB Ftau Test Conditio...
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