2SC5453 Silicon Transistor Datasheet

2SC5453 Datasheet, PDF, Equivalent


Part Number

2SC5453

Description

NPN Triple Diffused Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SC5453 Datasheet


2SC5453
Ordering number:EN5958
NPN Triple Diffused Planar Silicon Transistor
2SC5453
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown voltage (VCBO=1600V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2048B
[2SC5453]
20.0 3.3
5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
2.0
3.4
1.2
1 23
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Conditions
Ratings
1600
800
6
25
50
3.5
210
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Symbol
Conditions
ICES
VCEO(sus)
IEBO
ICBO
hFE1
hFE2
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=18A
Ratings
min typ max
Unit
1.0 mA
800 V
1.0 mA
10 µA
15 30
47
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
w w w . D a t a S h e e tcontrol systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
w w w . D a t a S h e e t 4 U . c o mTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TS (KOTO) TA-1383 No.5958–1/4

2SC5453
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
2SC5453
Symbol
Conditions
VCE(sat)
VBE(sat)
tstg
tf
IC=18A, IB=4.5A
IC=18A, IB=4.5A
IC=15A, IB1=2.5A, IB2=–6.25A
IC=15A, IB1=2.5A, IB2=–6.25A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
50
IB1
IB2
RB
+
100µF
VBE=–2V
OUTPUT
+
470µF
RL=13.3
VCC=200V
Ratings
min typ max
Unit
5V
1.5 V
3.0 µs
0.2 µs
I C - VCE
30
10.0A
8.0A
25 6.0A
5.0A
20 4.0A
3.0A
15 2.0A
1.0A
10 0.5A
5
IB = 0
00 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
100
7
5
3 Ta = 120°C
2 25°C
hFE - I C
VCE = 5V
-40°C
10
7
5
3
2
1.0
0.1
2 3 5 7 1.0
2 3 5 7 10
23 5
Collector Current, IC – A
25 VCE = 5V
20
I C - VBE
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V
10
7
IC / IB = 5
5
3
2
VCE(sat) - I C
1.0
7
5
3
2
0.1 Ta=-40°C
7
5 120°C 25°C
3
2
0.01
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC – A
5 7 100
No.5958–2/4


Features Ordering number:EN5958 NPN Triple Diffu sed Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizo ntal Deflection Output Applications Fea tures · High speed. · High breakdown voltage (VCBO=1600V). · High reliabili ty (Adoption of HVP process). · Adopti on of MBIT process. Package Dimensions unit:mm 2048B [2SC5453] 6.0 20.0 3.3 5 .0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ra tings at Ta = 25˚C Parameter Collector -to-Base Voltage Collector-to-Emitter V oltage Emitter-to-Base Voltage Collecto r Current Collector Current (Pulse) Col lector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO V EBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5 .45 Conditions 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3 PBL Ratings 1600 800 6 25 50 3.5 210 1 50 –55 to +150 Unit V V V A A W W ˚ C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Cur rent Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector.
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