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HY62256A Dataheets PDF



Part Number HY62256A
Manufacturers Hyundai
Logo Hyundai
Description 32K x 8-Bit CMOS SRAM
Datasheet HY62256A DatasheetHY62256A Datasheet (PDF)

HY62256A Series 32Kx8bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. The HY62256A has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5volt has little effect on supply current in the data retention mode. The HY62256A is suitable for use in lo.

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HY62256A Series 32Kx8bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. The HY62256A has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5volt has little effect on supply current in the data retention mode. The HY62256A is suitable for use in low voltage operation and battery back-up application. Product Voltage Speed No. (V) (ns) HY62256A 5.0 55/70/85 Note 1. Current value is max. Operation Current(mA) 50 FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min.) data retention • Standard pin configuration - 28 pin 600 mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard and Reversed) • • • • Standby Current(uA) L LL 1mA 100 25 Temperature (°C) 0~70(Normal) PIN CONNECTION A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 /OE A11 A9 A8 A13 /WE Vcc A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3 A4 A5 A6 A7 A12 A14 Vcc /WE A13 A8 A9 A11 /OE 14 13 12 11 10 9 8 7 6 5 4 3 2 1 15 16 17 18 19 20 21 22 23 24 25 26 27 28 A2 A1 A0 I/O1 I/O2 I/O3 Vss I/O4 I/O5 I/O6 I/O7 I/O8 /CS A10 PDIP SOP TSOP-I(Standard) TSOP-I(Reversed) PIN DESCRIPTION Pin Name /CS /WE /OE A0 ~ A14 I/O1 ~ I/O8 Vcc Vss Pin Function Chip Select Write Enable Output Enable Address Inputs Data Input/Output Power(+5.0V) Ground A0 BLOCK DIAGRAM SENSE AMP ROW DECODER ADD INPUT BUFFER I/O1 OUTPUT BUFFER I/O8 COLUMN DECODER A14 /CS /OE /WE CONTROL LOGIC www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. www.DataSheet4U.com Rev.02 /Jun.99 Hyundai Semiconductor WRITE DRIVER MEMORY ARRAY 512x512 HY62256A Series ORDERING INFORMATION Part No. HY62256AP HY62256ALP HY62256ALLP HY62256AJ HY62256ALJ HY62256ALLJ HY62256AT1 HY62256ALT1 HY62256ALLT1 HY62256AR1 HY62256ALR1 HY62256ALLR1 Speed 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 Power L-part LL-part L-part LL-part L-part LL-part L-part LL-part Package PDIP PDIP PDIP SOP SOP SOP TSOP-I Standard TSOP-I Standard TSOP-I Standard TSOP-I Reversed TSOP-I Reversed TSOP-I Reversed ABSOLUTE MAXIMUM RATING (1) Symbol Vcc, VIN, VOUT TA TSTG PD IOUT TSOLDER Parameter Power Supply, Input/Output Voltage Operating Temperature Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature & Time Rating -0.5 to 7.0 0 to 70 -65 to 150 1.0 50 260 • 0 Unit V °C °C W mA °C•sec Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. RECOMMENDED DC OPERATING CONDITIONS TA=0°C to 70°C Symbol Parameter Vcc Power Supply Voltage VIH Input High Voltage VIL Input Low Voltage Min. 4.5 2.2 -0.5(1) Typ. 5.0 Max. 5.5 Vcc+0.5 0.8 Unit V V V Note 1. VIL = -3.0V for pulse width less than 30ns TRUTH TABLE /CS H L L L /WE X H H L /OE X H L X MODE Standby Output Disabled Read Write I/O OPERATION High-Z High-Z Data Out Data In Note : 1. H=VIH, L=VIL, X=Don't Care Rev.02 /Jun.99 2 HY62256A Series DC CHARACTERISTICS Vcc = 5V±10%, TA = 0°C to 70°C (Normal) unless otherwise specified Symbol Parameter Test Condition ILI Input Leakage Current Vss < VIN <.Vcc ILO Output Leakage Current Vss < VOUT < Vcc, /CS = VIH or /OE = VIH or /WE = VIL Icc Operating Power Supply /CS = VIL, Current VIN = VIH or VIL, II/O = 0mA ICC1 Average Operating Current /CS = VIL, Min. Duty Cycle = 100%, II/O = 0mA ISB TTL Standby Current /CS= VIH VIN = VIH or VIL (TTL Inputs) ISB1 CMOS Standby Current /CS > Vcc - 0.2V (CMOS Inputs) VIN < 0.2V or L VIN > Vcc – 0.2V LL VOL Output Low Voltage IOL = 2.1mA VOH Output High Voltage IOH = -1mA Note : Typical values are at Vcc =5.0V, TA = 25°C Min. -1 -1 2.4 Typ. 30 40 0.4 2 1 Max. 1 1 50 70 2 1 100 25 0.4 Unit uA uA mA mA mA mA uA uA V V AC CHARACTERISTICS Vcc = 5V±10%, TA = 0°C to 70°C (Normal) unless otherwise specified. -55 # Symbol Par.


LXT334 HY62256A TSI106G


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