STP3NA60 STP3NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP3NA60 STP3NA60FI
s s s s s s s
VDSS ...
STP3NA60 STP3NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STP3NA60 STP3NA60FI
s s s s s s s
VDSS 600 V 600 V
R DS(on) <4Ω <4Ω
ID 2.9 A 2.1 A
TYPICAL RDS(on) = 3.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
3 1 2
3 1 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Value STP3NA60 STP3NA60FI 600 600 ± 30
o
Unit
V DS V DGR V GS ID ID I DM ( ) P tot V ISO T stg Tj
Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
V V V 2.1 1.3 11.6 40 0.32 2000 A A A W W/o C V
o o
2.9 1.8 11.6 80 0.64 -65 to 150 150
C C
() Pulse width limited by safe o...