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2SA1714 Dataheets PDF



Part Number 2SA1714
Manufacturers NEC
Logo NEC
Description PNP SILICON EPITAXIAL POWER TRANSISTOR
Datasheet 2SA1714 Datasheet2SA1714 Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. PACKAGE DRAWING (UNIT: mm) FEATURES • High DC current amplifiers due to darlington connection • Large current capacitance and low VCE(sat) • TO-126 power transistor with high pow.

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DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. PACKAGE DRAWING (UNIT: mm) FEATURES • High DC current amplifiers due to darlington connection • Large current capacitance and low VCE(sat) • TO-126 power transistor with high power dissipation • Complementary transistor with 2SC4342 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Electrode Connection 1. Emitter 2. Collector 3. Base 4. Fin (collector) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg Ratings −100 −100 −8.0 – +3.0 – +6.0 −0.3 1.3 12 150 −55 to +150 Unit V V V A A A W W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16124EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1714 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector to emitter voltage Collector cutoff current Collector cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol VCEO(SUS) ICBO ICEO hFE1** hFE2** VCE(sat)** VBE(sat)** ton tstg tf Conditions IC = −3.0 A, IB = −3.0 mA, L = 1.0 mH VCB = −100 V, IE = 0 VCE = −100 V, RBE = ∞ VCE = −2.0 V, IC = −1.5 A VCE = −2.0 V, IC = −3.0 A IC = −1.5 A, IB = −1.5 mA IC = −1.5 A, IB = −1.5 mA IC = −1.5 A, IB1 = −IB2 = −1.5 mA, RL = 33 Ω, VCC ≅ −50 V Refer to the test circuit. 0.6 2,000 1,000 −0.9 −1.5 0.15 1.2 −1.2 −2.0 MIN. −100 −10 −10 20,000 TYP. MAX. Unit V µA µA − − V V µs µs µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed hFE CLASSIFICATION Marking hFE1 M 2,000 to 5,000 L 4,000 to 10,000 K 8,000 to 20,000 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 Data Sheet D16124EJ1V0DS 2SA1714 TYPICAL CHARACTERISTICS (Ta = 25°C) With infinite heatsink Without heatsink Data Sheet D16124EJ1V0DS 3 2SA1714 4 Data Sheet D16124EJ1V0DS 2SA1714 [MEMO] Data Sheet D16124EJ1V0DS 5 2SA1714 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into t.


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