RD38F2240
Intel® Wireless Flash Memory (W18/W30 SCSP)
32WQ and 64WQ Family with Asynchronous RAM
Product Features
Datasheet
■ De...
Description
Intel® Wireless Flash Memory (W18/W30 SCSP)
32WQ and 64WQ Family with Asynchronous RAM
Product Features
Datasheet
■ Device Architecture
— Flash Density: 32-Mbit, 64-Mbit
— Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit
— Top, Bottom or Dual flash parameter configuration
■ Device Voltage — Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V
— RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V
■ Device Packaging — 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm
■ PSRAM Performance — 70 ns initial access, 25 ns async page reads at 1.8 V I/O
— 70 ns initial access async PSRAM at 1.8V I/O
— 88 ns initial access, 30 ns async page reads at 1.8 V I/O
— 85 ns initial access, 35 ns async page reads at 3.0 V I/O
— 70 ns initial access, 25 ns async page reads at 3.0 V I/O
■ SRAM Performance — 70 ns initial access at 1.8 V or 3.0 V I/O
■ Flash Performance — 65 ns initial access at 1.8 V I/O
— 70 ns initial access at 3.0 V I/O
— 25 ns async page at 1.8 V or 3.0 V I/O
— 14 ns sync reads (tCHQV) at 1.8 V I/O — 20 ns sync reads (tCHQV) at 3.0 V I/O — Enhanced Factory Programming:
3.10 µs/Word (Typ)
■ Flash Architecture — Read-While-Write/Erase
— Asymmetrical blocking structure
— 4-KWord parameter blocks (Top or Bottom); 32-KWord main blocks
— 4-Mbit partition size
— 128-bit One-Time Programmable (OTP) Protection Register
— Zero-latency block locking
— Absolute write protection with block lock using F-VPP and F-WP#
■ Flash Software — Intel® Flash D...
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