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GMM26416233ENTG

Hynix Semiconductor

16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl

16Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26416233ENTG Des...


Hynix Semiconductor

GMM26416233ENTG

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Description
16Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26416233ENTG Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168 pin printed circuit board with decoupling capacitors. The GMM26416233ENTG is optimized for application to the systems which are required high density and large capacity such as main memory of the computers and an image memory systems, and to the others which are requested compact size. The GMM26416233ENTG provides common data inputs and outputs. GMM26416233ENTG (Double Side) Features * PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2) * 3.3V +/- 0.3V Power supply * Maximum Clock frequency 100/125/133/143 MHz * LVTTL Interface * Burst read/write operation and burst read/ single write operation capability * Programmable burst length ; 1, 2, 4, 8, Full page * Programmable burst sequence Sequential / Interleave * Full Page burst length capability Sequential burst Burst stop capability * Programmable CAS Latency ; 2, 3 CKE power down mode * Input / Output data masking * 4096 Refresh Cycles / 64ms * Auto refresh / Self refresh Capability * Serial Presence Detect with EEPROM Pin Name CK0, 1, 2, 3 CKE0,1 S0,1,2,3 RAS CAS WE A0 ~ A11 BA0,1 DQ0 ~ 63 DQMB0 ~ 7 V CC V SS NC V REF SDA SCL SA0 ~ 2 DU ...




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