EFFECT TRANSISTOR. 3SK131 Datasheet

3SK131 TRANSISTOR. Datasheet pdf. Equivalent

3SK131 Datasheet
Recommendation 3SK131 Datasheet
Part 3SK131
Description MOS FIELD EFFECT TRANSISTOR
Feature 3SK131; DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICO.
Manufacture NEC
Datasheet
Download 3SK131 Datasheet




NEC 3SK131
DDAATTAA SSHHEEEETT
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in VHF TV tuner.
• Low Crss : 0.05 pF TYP.
• High Gps : 23 dB TYP.
• Low NF : 1.3 dB TYP.
PACKAGE DIMENSIONS
(Unit: mm)
+0.2
2.8 0.3
+0.2
1.5 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSX
20
Gate1 to Source Voltage
VG1S
8
Gate2 to Source Voltage
VG2S
8
Drain Current
ID 25
Total Power Dissipation
PT
200
Channel Temperature
Tch
125
Storage Temperature
Tstg 55 to +125
V
V
V
mA
mW
C
C
5° 5°
5° 5°
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Drain to Source Breakdown Voltage BVDSX
20
Drain Current
IDSS 7 10
Gate1 to Source Cutoff Voltage
VG1S(OFF)
Gate2 to Source Cutoff Voltage
VG2S(OFF)
Gate1 Reverse Current
IG1SS
Gate2 Reverse Current
Forward Transfer Admittance
IG2SS
yfs 22 28
MAX.
25
2.0
1.5
20
20
Input Capacitance
Ciss 4.0 5.0 6.5
Output Capacitance
Coss 2.2 2.9 3.7
Reverse Transfer Capacitance
Crss
0.05 0.08
Power Gain
Cps 21 24
Noise Figure
NF 1.2 2.5
IDSS classification V11 7-13 mA V12 11-19 mA V13 17-25 mA
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
UNIT
V
mA
V
V
nA
nA
mS
pF
pF
pF
dB
dB
TEST CONDITIONS
VG1S = VG2S = 2 V, ID = 10 A
VDS = 6 V, VG2S = 3 V, VG1S = 0
VDS = 8 V, VG2S = 0, ID = 5 A
VDS = 8 V VG1S = 0, ID = 5 A
VDS = 0, VG1S = 8 V, VG2S = 0
VDS = 0, VG2S = 8 V, VG1S = 0
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 kHz
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 MHz
VDS = 10 V, VG2S = 5 V, ID = 10 mA
f = 200 MHz
Document No. P12449EJ2V0DS00 (2nd edition)
(Previous No. TC-1508)
Date Published March 1997 N
Printed in Japan
©
1983



NEC 3SK131
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0 25 50 75 100 125
Ta-Ambient Temperature-°C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
20
1V
10
VG2S = 0
1.0
0
VG1S-Gate 1 to Source Voltage-V
+1.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
25
20
15
10
VDS = 6 V
5 VG2 = 3 V
f = 1.0 kHz
0 10 20
ID-Drain Current-mA
2
3SK131
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
VG2 = 3.0 V
VG1S = 0 V
0.1
10
0.2
0.3
0.4
0.5
0.6
0 10 20
VDS-Drain to Source Voltage-V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
VDS = 6 V
40
30
20
VG2S = 5 V
4V
3V
2V
10
1V
0 1.0
0V
0
1.0
VG1S-Gate 1 to Source Voltage-V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
VDS = 6.0 V
f = 1 MHz
8.0
6.0
VG1S = 0.05 V
4.0
2.0
0
1.0
0 1.0 2.0 3.0
VG2S-Gate 2 to Source Voltage-V
4.0



NEC 3SK131
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
VDS = 6.0 V
f = 1.0 MHz
4.0
VG1S = 0 V
3.0
0.5 V
2.0
1.0
0
1.0
0 1.0 2.0 3.0
VG2S-Gate 2 to Source Voltage-V
4.0
FORWARD TRANSFER ADMITTANCE (yfs)
vs. FREQUENCY
gfs-Forward Transfer Conductance-mS
10
5
VDS = 6 V
20
100 MHz
30
VG2S = 3 V
ID = 10 mA
10
200 MHz
300 MHz
15
OUTPUT ADMITTANCVE (yos)
vs. FREQUENCY
5
VDS = 6 V
300 MHz
VG2S = 3 V
ID = 10 mA
4
200 MHz
3
2
100 MHz
1
0 0.5 1.0
gos-Output Conductance-mS
3SK131
INPUT ADMITTANCE (yis)
vs. FREQUENCY
10
VDS2 = 6 V
VG2S = 3 V
ID = 10 mA
300 MHz
200 MHz
5
100 MHz
0 12
gis-Input Conductance-mS
REVERSE TRANSFER ADMITTANCE (yrs)
vs. FREQUENCY
grs-Reverse Transfer Conductance-mS
0 0.1 0.2
VDS = 6 V
VG2S = 3 V
ID = 10 mA
300 MHz
0.1
200 MHz
100 MHz
0.2
POWER GAIN vs. DRAIN CURRENT
25
20
15
f = 200 MHz
10 VDS = 10 V
VG2S = 5 V
VDS = 5 V
VG2S = 3 V
5
0 2 4 6 8 10
ID-Drain Current=mA
3







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