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DIM250WHS06-S000 Dataheets PDF



Part Number DIM250WHS06-S000
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description IGBT Chopper Module
Datasheet DIM250WHS06-S000 DatasheetDIM250WHS06-S000 Datasheet (PDF)

DIM250WHS06-S000 DIM250WHS06-S000 Half Bridge IGBT Module PDS5676-1.3 February 2004 FEATURES I I I I KEY PARAMETERS VCES VCE(sat)* IC IC(PK) (typ) 600V 2.1V (max) 250A (max) 500A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS I I *(measured at the power busbars and not the auxiliary terminals) PWM Motor Control UPS 7(E2) 6(G2) The Powerline range of modules includes half bridge, chopper, bi-directional, dual and single switch configurations covering .

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DIM250WHS06-S000 DIM250WHS06-S000 Half Bridge IGBT Module PDS5676-1.3 February 2004 FEATURES I I I I KEY PARAMETERS VCES VCE(sat)* IC IC(PK) (typ) 600V 2.1V (max) 250A (max) 500A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS I I *(measured at the power busbars and not the auxiliary terminals) PWM Motor Control UPS 7(E2) 6(G2) The Powerline range of modules includes half bridge, chopper, bi-directional, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM250WHS06-S000 is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems. 1(E1C2) 2(E2) 3(C1) 4(G1) 5(E1) Fig. 1 Half bridge circuit diagram ORDERING INFORMATION Order as: DIM250WHS06-S000 Note: When ordering, use complete part number. Outline type code: W (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.DataSheet4U.com 1/8 www.dynexsemi.com www.DataSheet4U.com www.DataSheet4U.com DIM250WHS06-S000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Tcase = 65˚C 1ms, Tcase = 95˚C Tcase = 25˚C, Tj = 150˚C VR = 0, tp = 10ms, Tvj = 125˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 600 ±20 250 500 1157 TBD 2.5 Units V V A A W kA2s kV THERMAL AND MECHANICAL RATINGS Internal insulation: Al2O3 Baseplate material: Cu Creepage distance: 24mm Symbol Rth(j-c) Parameter Thermal resistance - transistor Clearance: 13mm CTI (Critical Tracking Index): 175 Test Conditions Continuous dissipation junction to case Min. - Typ. - Max. 108 Units ˚C/kW Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case - - 203 ˚C/kW Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Transistor Diode - - 15 ˚C/kW Tj Junction temperature –40 3 2.5 - 150 125 125 5 5 ˚C ˚C ˚C Nm Nm Tstg - Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM250WHS06-S000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(sat)† Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 250A VGE = 15V, IC = 250A, , Tcase = 125˚C IF IFM VF† Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 250A IF = 250A, Tcase = 125˚C Cies LM RINT Input capacitance Module inductance Internal transistor resistance - per arm VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 2.1 2.3 1.5 1.5 27 20 0.23 Max. 1 10 1 7.5 2.6 2.8 250 500 1.8 1.8 Units mA mA µA V V V A A V V nF nH mΩ Note: † Measured at the power busbars and not the auxiliary terminals. L* is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/8 www.dynexsemi.com DIM250WHS06-S000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 250A, VR = 300V, dIF/dt = 3600A/µs Test Conditions IC = 250A VGE = ±15V VCE = 300V RG(ON) = RG(OFF) = 4.7Ω L ~ 100nH Min. Typ. 600 250 20 330 130 12 2 15 185 4 Max. Units ns ns mJ ns ns mJ µC µC A mJ Tcase = 125˚C unless stated otherwise Symbol td(off) tf EOFF t.


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