STP3NB90FP
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STP3NB90 STP3NB90FP
N-CHANNEL 900V - 4 Ω - 3....
Description
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STP3NB90 STP3NB90FP
N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET
R DS(on) < 4.2 Ω < 4.2 Ω ID 3.5 A 3.5 A Pw 110 W 35 W
TYPE
VDSS 900 V 900 V
STP3NB90 STP3NB90FP
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES
3 1 2
TO-220
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ORDERING INFORMATION
SALES TYPE STP3NB90
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MARKING P3NB90 P3NB90FP
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INTERNAL SCHEMATIC DIAGRAM
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TO-220FP
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3 1 2
PACKAGE TO-220 TO-220FP
PACKAGING TUBE TUBE
STP3NB90FP
October 2002
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STP3NB90 - STP3NB90FP
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID
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Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Dr...
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