SSH10N90A

N-CHANNEL POWER MOSFET SSH10N90A FEATURES BVDSS = 900V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max.) @ VDS = 900V Lower RDS(ON): 0.938Ω (Typ.) 1 2 3 RDS(ON) = 1.2Ω ID = 10A TO-3P ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC = 25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds y x x z x Value 900 10 6.3 40 ±30 794 10 28 1.5 280 2.22 −55 to +150 1. Gate 2. Drain 3. Source Units V A A V mJ A mJ V/ns W W/°C °C 300 THERMAL RESISTANCE Symbol RθJC RθCS RθJA Characteristics Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. − 0.24 − Max. 0.45 − 40 °C/W Units REV. B 1  1999 Fairchild Semiconductor Corporation SSH10N90A N-CHANNEL POWER MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leak...