CE1A3Q

DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. PACKAGE DRAWING (UNIT: mm) FEATURES On-chip zener diode for surge voltage absorption On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings 60±10 60±10 15 ±2.0 ±3.0 0.03 1.0 150 −55 to +150 Unit V V V A A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Colletor to emitter voltage Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance 1 Input resistance 2 Turn-on time Storage time Fall time Symbol VCEO(SUS) ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 ton tstg tf IC = 1.0 A IBI = −IB2 = 10 mA VCC = 20 V, RL = 20 Ω Conditions IC = 2.0 A, IB = 5.0 Ma, L = ...