CE1F3P

'$7$ 6+((7 &203281' 75$16,6725 &()3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. * PW≤10 ms, duty cycle≤50 % PACKAGE DRAWING (UNIT: mm) FEATURES On-chip zener diode for surge voltage absorption On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings 60±10 60±10 15 ±2.0 ±3.0 0.03 1.0 150 −55 to +150 Unit V V V A A A W °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Colletor to emitter voltage Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance 1 Input resistance 2 Turn-on time Storage time Fall time Symbol VCEO(SUS) ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 ton tstg tf IC = 1.0 A IBI = −IB2 = 10 mA VCC = 20 V, RL = 20 Ω Conditions IC = 2.0 A, IB = 5.0 Ma, L = 6.0 ...