SCR. BTW68N Datasheet

BTW68N SCR. Datasheet pdf. Equivalent

Part BTW68N
Description SCR
Feature www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Manufacture ST Microelectronics
Datasheet
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Recommendation Recommendation Datasheet BTW68N Datasheet




BTW68N
BTW68
30 A SCRs
Features
On-state rms current: 30 A
Blocking voltage: up to 1200 V
Gate current: 50 mA
UL 2500 V insulation (file ref E81734)
Description
Available in a high power insulated package, the
BTW68 series is suitable for applications where
power handling and power dissipation are critical
such as solid state relays, welding equipment and
high power motor control.
Based on a clip assembly technology, this device
offers a superior performance in surge current
handling capabilities.
Thanks to the internal ceramic pad, the device
provides high voltage insulation (2500 VRMS) and
complies with UL standards (file ref: E81734).
A
G
K
K
A
G
TOP3 ins.
Table 1. Device summary
Symbol
Value
IT(RMS)
VDRM/VRRM
IGT
30 A
600 to 1200 V
50 mA
July 2010
Doc ID 17757 Rev 3
1/8
www.st.com
8



BTW68N
Characteristics
1 Characteristics
BTW68
Table 2.
Symbol
Absolute maximum ratings (limiting values)
Parameter
Value
Unit
IT(RMS)
IT(AV)
ITSM
I²t
On-state current rms (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I²t Value for fusing
tp = 8.3 ms
tp = 10 ms
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Tc = 80 °C
Tc = 80 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
30
19
420
400
800
100
8
1
- 40 to + 150
- 40 to + 125
5
A
A
A
A2S
A/µs
A
W
°C
V
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Value
Unit
IGT
VGT
VGD
tgt
IH
IL
dV/dt
VTM
IDRM
IRRM
tq
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
Tj = 125 °C
VD = VDRM, IG = 200 mA, dIG/dt = 1.5 A/µs
IT = 500 mA, gate open
IG = 1.2 x IGT
VD = 67 % VDRM
gate open
VDRM = 800 V Tj = 125 °C
VDRM = 1000 V
ITM = 60 A, tp = 380 µs
VDRM = VRRM
Tj = 25 °C
Tj = 125 °C
VD = 67% VDRM, ITM = 60 A, VR = 75 V
dITM/dt = 30 A/µs, dVD/dt = 20 V/µs
Tj = 125 °C
MIN.
MAX.
MIN.
TYP.
MAX.
TYP.
MIN.
MAX.
MAX.
TYP.
50
1.5
0.2
2
75
40
500
250
2.1
20
6
100
mA
V
V
µs
mA
mA
V/µs
V
µA
mA
µs
Table 4.
Symbol
Thermal resistance
Parameter
Value
Unit
Rth(j-c) Junction to case (D.C.)
Rth(j-a) Junction to ambient
1.1 °C/W
50 °C/W
2/8 Doc ID 17757 Rev 3





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