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BTW68

ST Microelectronics

(BTW67 - BTW69) 50A SCRs

BTW67 and BTW69 Series STANDARD 50A SCRs MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50 600 to 1200 80 Unit A V...


ST Microelectronics

BTW68

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Description
BTW67 and BTW69 Series STANDARD 50A SCRs MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50 600 to 1200 80 Unit A V mA DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (file ref: E81734). ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current Parameter RD91 TOP3 Ins. RD91 TOP3 Ins. tp = 8.3 ms Tj = 25°C tp = 10 ms I ²t dI/dt IGM PG(AV) Tstg Tj VRGM I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 580 1680 50 8 1 - 40 to + 150 - 40 to + 125 5 A2 S A/µs A W °C V 1/5 www.DataSheet4U.com RD91 (BTW67) TOP3 (BTW69) Value Tc = 70°C 50 Tc = 75°C Tc = 70°C 32 Tc = 75°C 610 Unit A IT(AV) A ITSM A April 2001 - Ed: 4 www.DataSheet4U.com www.DataSheet4U.com BTW67 and BTW69 Series ELECTRI...




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