BS62LV4006

( DataSheet : www.DataSheet4U.com ) BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4006 Wide Vcc operation voltage : 2.4V ~ 5.5V Very low power consumption : Vcc = 3.0V C-grade: 29mA (@55ns) operating current I -grade: 30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 68mA (@55ns) operating current I -grade: 70mA (@55ns) operating current C-grade: 58mA (@70ns) operating current I -grade: 60mA (@70ns) operating current 2.0uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options Three state outputs and TTL compatible „ DESCRIPTION The BS62LV4006 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) , and active LOW output enable (OE) and three-state output drivers. The BS62LV4006 has an automatic power down feature, reducing the power consumption significantly when chip is desele...