N-Channel MOSFET. FCI11N60 Datasheet

FCI11N60 MOSFET. Datasheet pdf. Equivalent

Part FCI11N60
Description 600V N-Channel MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) FCI11N60 600V N-Channel MOSFET July 2005 SuperFET FCI11N60 60.
Manufacture Fairchild Semiconductor
Datasheet
Download FCI11N60 Datasheet

( DataSheet : www.DataSheet4U.com ) FCI11N60 600V N-Channel FCI11N60 Datasheet
Recommendation Recommendation Datasheet FCI11N60 Datasheet




FCI11N60
( DataSheet : www.DataSheet4U.com )
FCI11N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff. = 95pF)
• 100% Avalanche Tested
July 2005
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
GDS
D
{
z

G{
z
z
{
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCI11N60
600
11
7
33
± 30
340
11
12.5
4.5
125
1.0
-55 to +150
300
FCI11N60
1.0
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
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©2005 Fairchild Semiconductor Corporation
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1
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FCI11N60
Package Marking and Ordering Information
Device Marking
FCI11N60
Device
FCI11N60
Package
I2-PAK
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/ TJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
VGS = 0V, ID = 250µA, TJ = 150°C
ID = 250µA, Referenced to 25°C
VGS = 0V, ID = 11A
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.5A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 5.5A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300V, ID = 11A
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 480V, ID = 11A
VGS = 10V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 11A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 11A
dIF/dt =100A/µs
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 11A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Min
600
--
--
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
650
0.6
700
--
--
--
--
--
0.32
9.7
1148
671
63
35
95
34
98
119
56
40
7.2
21
--
--
--
390
5.7
Max Units
-- V
-- V
-- V/°C
--
1
10
100
-100
V
µA
µA
nA
nA
5.0 V
0.38
-- S
1490
870
--
--
--
pF
pF
pF
pF
pF
80 ns
205 ns
250 ns
120 ns
52 nC
-- nC
-- nC
11 A
33 A
1.4 V
-- ns
-- µC
FCI11N60 Rev. A1
2 www.fairchildsemi.com





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